AOD2910 Datasheet | Specifications & PDF Download

AOD2910 100V N-Channel MOSFET General Description The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient

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isc N-Channel MOSFET Transistor AOD2910 ·FEATURES ·Drain Current –ID= 31A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-R

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AOD2910E 100V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • ESD protected • Optimized fo

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% av

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