AOD407 Datasheet | Specifications & PDF Download

AOD407 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD407 uses advanced trench technology to provide excellent RDS(ON)

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isc P-Channel MOSFET Transistor AOD407 FEATURES ·Drain Current –ID=-12A@ TC=25℃ ·Drain Source Voltage- : VDSS=-60V(Min) ·Static Drain-Source On-Resi

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AOD407 AOD407 P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5

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