AOD409 Datasheet | Specifications & PDF Download

AOD409/AOI409 60V P-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switc

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isc P-Channel MOSFET Transistor ·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·

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isc P-Channel MOSFET Transistor AOD409G ·FEATURES ·Drain Current –ID= -28A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-

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AOD409G 60V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Logic Level Driving • RoHS and Halogen-Free Complia

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AOD409 AOD409 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.046 at VGS = - 10 V 0.058 at VGS = - 4.5 V

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