AOD410 Datasheet | Specifications & PDF Download

AOD4100 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4100 uses advanced trench technology to provide excellent RDS(ON

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AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4104 uses advanced trench technology to provide excellent RDS(ON

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AOD4106 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4106 uses advanced trench technology to provide excellent RDS(ON

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isc N-Channel MOSFET Transistor AOD4102 FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resi

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www.DataSheet4U.com Rev3: Nov 2004 AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4

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AOD4102/AOI4102 30V N-Channel MOSFET General Description The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON)

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Rev3: Nov 2004 AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD410 uses advanced tren

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