AOD425 Datasheet | Specifications & PDF Download

AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD425 uses advanced trench technology to provide excellent RDS(ON)

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isc P-Channel MOSFET Transistor AOD425 FEATURES ·Drain Current –ID= -50A@ TC=25℃ ·Drain Source Voltage- : VDSS= -30V(Min) ·Static Drain-Source On-Re

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AOD425-VB AOD425-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.025

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