AOD510 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor AOD510 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resis

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AOD510/AOI510 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate

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