AOI Datasheet | Specifications & PDF Download

AOD206/AOI206 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • Hig

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AOD450A70/AOI450A70 700V, aMOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switchin

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AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines exc

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AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low E

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AOD4146/AOI4146 30V N-Channel MOSFET SDMOS TM General Description The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excel

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AOD409/AOI409 60V P-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switc

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AOD4T60P/AOI4T60P 600V,4A N-Channel MOSFET General Description • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current

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AOD2210/AOI2210 200V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-sw

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AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optim

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AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using a

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AOD950A70/AOI950A70 700V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switchi

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AOD2606/AOI2606 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-swi

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AOD4102/AOI4102 30V N-Channel MOSFET General Description The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON)

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AOD4130/AOI4130 60V N-Channel MOSFET General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package

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isc N-Channel MOSFET Transistor AOI2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor AOI7N60 FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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AOD5N40/AOI5N40 400V,4.2A N-Channel MOSFET General Description The AOD5N40 & AOI5N40 have been fabricated using an advanced high voltage MOSFET proce

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AOD2610/AOI2610 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-swi

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isc N-Channel MOSFET Transistor AOI2606 FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Res

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