AOI2N60 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor AOI2N60 FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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AOI2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOI2N60 has been fabricated using an advanced high voltage MOSFET process

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AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss •

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isc N-Channel MOSFET Transistor AOI2N60A FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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