AOI4T60P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor AOI4T60P FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R

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AOD4T60P/AOI4T60P 600V,4A N-Channel MOSFET General Description • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current

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