AOI538 Datasheet | Specifications & PDF Download

AOD538/AOI538 30V N-Channel αMOS™ General Description • Trench Power AlphaMOS (αMOS™ LV) technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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isc N-Channel MOSFET Transistor AOI538 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resis

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