AONH36334 30V Dual Asymmetric N-Channel MOSFET Ge.
AONH36334 - 30V Dual Asymmetric N-Channel MOSFET
AONH36334 30V Dual Asymmetric N-Channel MOSFET General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Ch.