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AOT410L/AOB410L 100V N-Channel MOSFET SDMOS TM General Description The AOT410L/AOB410L is fabricated with SDMOSTM trench technology that combines exc

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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AOTL66912 100V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Combination of low RDS(ON) and wide safe ope

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AOK20B65M1/AOT20B65M1/AOB20B65M1 650V, 20A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description • Latest Alpha IGBT (α I

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AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOT10N65 & AOTF10N65 have been fabricated using an advanced hi

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AOTF600A60L/AOT600A60L/AOB600A60L 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5TM technology •

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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АОТ128х Транзисторная оптопара Описание Оптопара состоит из кристаллов инфракрасного AsGaAl светодиода и кремниевого n-p-n фототранзистора. Кристаллы

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Low Power-Loss Voltage Regulators PQ05RF2/PQ05RF21/PQ05RF2V Series m Series PQ05RF2/21/2V o c s q Features s Model Line-ups 13.5MIN Output volt

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AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an ad

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOTF190A60L ·FEATURES ·With To-220F package ·Low input capacitance and gate charge ·Low gate

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isc N-Channel MOSFET Transistor AOT16N50 FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor AOT8N60 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor AOT3N50 FEATURES ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Re

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AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB1

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AOT10B65MQ2 650V, 10A AlphaIGBT TM With Soft and Fast Recovery Anti-Parallel Diode General Description • Latest AlphaIGBT (αIGBT) technology • 650V b

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AOT42S60L/AOB42S60L 600V 37A a MOS TM Power Transistor General Description Product Summary The AOT42S60L & AOB42S60L have been fabricated using the

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AOT254L-VB AOT254L-VB Datasheet N-Channel 150-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.030 at VGS = 10 V

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www.DataSheet4U.com AOT402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT402 uses advanced trench technology and desi

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AOT8N50/AOTF8N50 500V, 9A N-Channel MOSFET General Description Product Summary The AOT8N50 & AOTF8N50 have been fabricated using an advanced high v

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