AOW4S60 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor AOW4S60 FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resis

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AOW4S60/AOWF4S60 600V 4A α MOS TM Power Transistor General Description The AOW4S60 & AOWF4S60 have been fabricated using the advanced αMOSTM high vol

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