APT6030BVR Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance :

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APT6030BVR APT6030SVR 600V 21A 0.300Ω POWER MOS V® MOSFET BVR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOS

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