APT8075BVR Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance :

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APT8075BVR 800V 12A 0.750Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolo

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APT8075BVR-VB www.VBsemi.com APT8075BVR-VB Datasheet N-Channel 800 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on)

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