Features • 2.7V to 3.6V Read/Write Operation â€.
AT49BV004T - 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory
Features • 2.7V to 3.6V Read/Write Operation • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (1.