Features • 2.7V to 3.3V Read/Write • Access Ti.
AT49BV1604 - 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou.AT49BV1604T - 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou.AT49BV1604A - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3.AT49BV1604AT - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3.