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Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is the N-Channel logic enhancement mode power field effect transistors are produced using hig

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I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 26

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N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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U1520 thru U1560 ® Pb Free Plating Product U1520 thru U1560 Pb 15.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes Features Latest

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using hi

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using hi

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I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 26

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ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis

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MUR1220CTR thru MUR1260CTR ® MUR1220CTR thru MUR1260CTR Pb Pb Free Plating Product 12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifier

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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ATS2835P Datasheet Actions® ATS2835PTM QFN68 Bluetooth Audio Solution Low Power Solution for Portable & Wireless Audio Applications Local MMC/SD Card

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PR EL IM INA RY EB-CCD TV SCAN RATE TYPE : N7640 SLOW SCAN TYPE : N7220 For Low-Light-Level Imaging with high S/N ratio s Imaging Conditions Object i

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U1520 thru U1560 ® Pb Free Plating Product U1520 thru U1560 Pb 15.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes Features Latest

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N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO

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IPD I IPD (MIP022X) IPD PWM 60 W IPD I G ( 12 V/3 A : 100 VAC : 100 VAC (MIP022X) : 1/20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60 G 0.3 W IPD

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