Features  N-Channel  Enhancement mode  Very low on-resistance  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant VSR080N06MS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion efficiency 

Features ♦Ron(typ.)=30 mΩ @VGS=4.5V ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast Switching ♦Lead-Free, RoHS Compliant VS2302AT 20V/3.2A N-Ch

Features ♦Ron(typ.)=95 mΩ ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast Switching ♦Lead-Free, RoHS Compliant VS2301BC -20V/-1.8A P-Channel Ad

Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant

VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features  P-Channel  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant;

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion efficie

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  P

2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Test

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5V  100% Avalanche test  Pb-free lead platin

2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.

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A FT TEF6606 Advanced tuner on main-board IC Rev. 01.03 — 12 June 2007 Objective data sheet R A T D 1. General description The TEF6606 is an AM/FM

Features  Dual N-Channel, 5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested

Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching and High efficiency  Enhancement mode  Pb-fre

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