B2D10120H1 Datasheet, Features, Application
B2D10120H1 SiC Schottky Diode
Product Summary VRRM 1200V IF (TC=150°C) QC 1.
BASiC Semiconductor
B2D10120H1 - SiC Schottky Diode
Product Summary VRRM 1200V IF (TC=150°C) QC 10 A 51 nC Features Low leakage current (IR) Zero reverse recovery current Temperature independ.
1.0
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