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B47ph Matched Datasheet



Part Number Description Manufacture
IRFB4710
Power MOSFET
Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Notes  through ‡ Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ are on page 11 Typ.
  –
  –
  – 0.50
  –
  –
  –
  –
  –
  – Max. 0.74
  –
  –
  – 62 40
Manufacture
International Rectifier
DHTAB473-952
Power Thermistor
- Cep:09629-040 - SP - Brasil Tel: (11) 4367-7411 - Fax: (11) 4367-7416 - www.voltts.com.br - [email protected] Free Datasheet http://www.datasheet4u.com/ NTC POWER THERMISTOR 5Ø SERIES POWER DERATING CURVE R-T CHARACTERISTIC CURVE SPECIFICATIO
Manufacture
TKS
KTD101B476M99A0B00
DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS
1. Small in size and wide capacitance range. Max. 470µF is available. 2. Temperature characteristic is X7R in EIA code. 3. Superior humidity characteristic and long life. 4. Excellent high frequency characteristic due to low ESR. 5. High rated ripple
Manufacture
NIPPON CHEMI-CON
2SB474
Audio Frequency High Power Amplifier
Manufacture
Sanyo
P6SMB47A
Surface Mount Transient Voltage Suppressors
u For surface mounted applications in order to optimize board space u Low leakage u Uni and Bidirectional unit u Glass passivated junction u Low inductance u Excellent clamping capability u 600W Peak power capability at 10 × 1000µs waveform Repetitio
Manufacture
SOCAY
P6SMB47CA
Transient Voltage Suppressor Diode
n RoHS compliant* and halogen free** n Surface Mount SMB package n Breakdown Voltage: 6.8 to 550 volts n Peak Pulse Power: 600 watts n Typical temperature coefficient: ∆VBR = 0.1 % x VBR @ 25 °C x ∆T Applications n IEC 61000-4-2 ESD (Min. L
Manufacture
BOURNS
1ZB47
(1ZB6.8 - 1ZB390) Zener Diodes
Silicon planar power zener diodes For use in stabilizing and clipping curcuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "A" for ±5% tolerance. Other zener voltage and tolerances are available upon request. DO - 41
Manufacture
Luguang Electronic
CL31B473KACNBN
Array Type Capacitors
Capacitance 27pF 10pF 15pF 22pF 27pF 33pF 39pF 68pF 82pF 100pF 150 180pF 330pF 470pF 470 100nF 100nF 1 10 15nF 47nF 100nF 100nF 100nF 100nF 100nF 100nF 100nF 1 1 1 1 1 1 2.2 2.2 1 1 1 47 100 Element Type 2-Array Size L W (mm) 1.40 1.00 Rated Volta
Manufacture
Samsung
IRFB4710
N-Channel MOSFET

·Static drain-source on-resistance: RDS(on) ≤0.014Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·reliable device for use in a wide var
Manufacture
INCHANGE
BZT52B47
Surface Mount Zener Diodes

■ Low zener impedance
■ Power dissipation: 500 mW
■ High stability and reliability Mechanical Data
■ SOD-123 small outline plastic package
■ Color band denotes cathode end
■ Mounting position: any BZT52Bxxx Series Surface Mount Zener Diodes Vz Range
Manufacture
GOOD-ARK

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