B761 Datasheet | Pinout, Features, Price Comparison & PDF

SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD856/856A ·Low collecto

SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD856/856A ·Low collecto

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB761 2SB761A DESCRIPTION ·With TO-220C package ·C

Photologic® Reflective Object Sensor OPB760, OPB761, OPB762, OPB763 (Series N and T) OPB770, OPB771, OPB772, OPB773 (Series NZ and TZ) Features: • Cho

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB761 2SB761A DESCRIPTION ·With TO-220C package ·C

Product Bulletin OPB760T June 1996 Photologic® Reflective Object Sensors Types OPB760T, OPB761T, OPB762T, OPB763T Features • Choice of mounting confi

Photologic® Reflective Object Sensor OPB760, OPB761, OPB762, OPB763 (Series N and T) OPB770, OPB771, OPB772, OPB773 (Series NZ and TZ) Features: • Cho

Product Bulletin OPB760N JJuannuear1y9290606 Photologic® Reflective Object Sensors Types OPB760N, OPB761N, OPB762N, OPB763N Features • Choice of moun

CEP76139/CEB76139 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A, RDS(ON) = 7mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super hi

DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications  Detectors  Mixers Features  Available in both P-ty

DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications  Detectors  Mixers Features  Available in both P-ty

DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications  Detectors  Mixers Features  Available in both P-type and N-ty

Photologic® Reflective Object Sensor OPB760, OPB761, OPB762, OPB763 (Series N and T) OPB770, OPB771, OPB772, OPB773 (Series NZ and TZ) Features: • Cho

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Op