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MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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® WON-TOP ELECTRONICS RB715F / RB717F SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Fast Switching Speed  PN Junction Gu

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 150A Peak  Low Power

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® WON-TOP ELECTRONICS SR5150 – SR5200 5.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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ESAD83-004 (30A) (40V / 30A ) SCHOTTKY BARRIER DIODE Features Low VF Super high speed switching High reliability by planer design Outline drawings,

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 80A Peak  Low Power L

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SB 520 SB 5100 Axial lead diode Schottky barrier rectifiers diodes SB 520 SB 5100 Forward Current: 5 A Reverse Voltage: 20 to 100 V Features 

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SB520 - SB5B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 5.0 Amp

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® WON-TOP ELECTRONICS SR5150 – SR5200 5.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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SEMICONDUCTOR TECHNICAL DATA MBRD5U100D SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATUR

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 80A Peak  Low Power L

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® WON-TOP ELECTRONICS SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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SR502 - SR506 HIGH CURRENT SCHOTTKY BARRIER RECTIFIER Features · · · · · High Current Capability and Low Forward Drop High Surge Capacity Guard Ring f

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