DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12.
EIC
BAX12 - CONTROLLED AVALANCHE DIODES
www.eicsemi.com BAX12, BAX12A CONTROLLED AVALANCHE DIODES FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetit.
EIC
BAX12A - CONTROLLED AVALANCHE DIODES
www.eicsemi.com BAX12, BAX12A CONTROLLED AVALANCHE DIODES FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetit.
Philipss
BAX12 - Controlled avalanche diode
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips .
