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BAX12 Controlled avalanche diode

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12.

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product speciﬁcation Supersedes data of April 1996 1996 Sep 17 Philips

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www.eicsemi.com BAX12, BAX12A CONTROLLED AVALANCHE DIODES FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetit

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www.eicsemi.com BAX12, BAX12A CONTROLLED AVALANCHE DIODES FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetit

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