BC818-16 Datasheet | Specifications & PDF Download

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor Product specification Supersedes data of 1997 Mar 05

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BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation vol

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NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Pb-f

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NPN Silicon AF Transistors BC 817 BC 818 q q q q q For general AF applications High collector current High current gain Low collector-emitter satur

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BC817W BC818W BC817W BC818W SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 500 mA hFE ~ 180/290/520 Tjmax = 150°C

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BC817, BC818 NPN Silicon AF Transistors 3
For general AF applications
High collector current
High current gain
Low collector-emitter saturati

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Production specification NPN General Purpose Amplifier FEATURES  For general AF application.  Complementary PNP type available BC808.  High colle

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BC817 BC818 BC817 BC818 SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 800 mA hFE ~ 160/250/400 Tjmax = 150°C VCES

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BC817W / BC818W NPN Silicon Epitaxial Planar Transistors for general purpose and switching applications These transistors are subdivided into three gr

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Production specification NPN general purpose transistor FEATURES z High collector current. z High current gain. Pb Lead-free z Low collector-emitt

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BC817 SERIES BC818 SERIES SURFACE MOUNT SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and

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BC817W, BC818W NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturatio

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