BC857BF Datasheet | Specifications & PDF Download

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise bet

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Features  BVCEO > -45V  IC = -100mA high Collector Current  PD = 435mW Power Dissipation  0.48mm2 package footprint, 16 times smaller than SOT23 

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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC856F; BC857F; BC858F series PNP general purpose transistors Preliminary specification Supersedes data of

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NEW PRODUCT Features  BVCEO > -45V  IC = -100mA High Collector Current  PD = 925mW Power Dissipation  0.36mm2 Package Footprint, 40% Smaller than

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