MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM LOW .
KERSEMI
BCR3KM-12LA - Triac
Features • IT (RMS) : 3 A • VDRM : 600 V • IFGTI , IRGTI, IRGTⅢ : 20 mA (10 mA)Note5 • Viso : 2000 V Outline TO-220FN 1 23 BCR3KM-12LA • Insulated Ty.
Mitsubishi Electric Semiconductor
BCR3KM - TRIAC
MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 D.
KERSEMI
BCR3KM-12 - Triac
Features • IT(RMS) : 3 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note3 Outline TO-220FN 1 23 BCR3KM-12 • Insulated Type • Planar .
Renesas
BCR3KM-14L - Triac
BCR3KM-14L Triac Low Power Use Features • IT (RMS) : 3 A • VDRM : 700 V • IFGTI, IRGTI, IRGTⅢ : 30 mA • Viso : 2000 V Outline TO-220FN 1 23 REJ03G033.
Mitsubishi Electric Semiconductor
BCR3KM-14 - TRIAC
MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM-14 LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM-14 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± .
Renesas Technology
BCR3KM-12 - Triac
BCR3KM-12 Triac Low Power Use REJ03G0312-0200 Rev.2.00 Nov.09.2004 Features • IT(RMS) : 3 A • VDRM : 600 V www.DataSheet4U.com • IFGT I, IRGT I, IRGT.
Renesas Technology
BCR3KM-12LA - Triac
BCR3KM-12LA Triac Low Power Use REJ03G0313-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 3 A • VDRM : 600 V www.DataSheet4U.com • IFGTI , IRGTI, IR.
Renesas Technology
BCR3KM-12LB - Triac
BCR3KM-12LB Triac Low Power Use REJ03G0314-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 3 A • VDRM : 600 V www.DataSheet4U.com • IFGTI , IRGTI, IR.
