MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5PM LOW P.
Renesas Technology
BCR5PM-12L - Triac
www.DataSheet4U.com BCR5PM-12L Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0460-0300 Rev.3.00 Mar 06,.
Renesas Technology
BCR5PM-12LG - Triac
BCR5PM-12LG Triac Medium Power Use REJ03G1507-0200 Rev.2.00 Mar 06, 2007 Features • IT (RMS) : 5 A • VDRM : 600 V www.DataSheet4U.com • IFGTI, IRGTI,.
INCHANGE
BCR5PM-14LJ - Thyristor
isc Thyristors INCHANGE Semiconductor BCR5PM-14LJ DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimu.
Renesas
BCR5PM-12LA - Triac
BCR5PM-12LA Triac Medium Power Use Preliminary Datasheet R07DS0100EJ0300 (Previous: REJ03G0302-0200) Rev.3.00 Sep 13, 2010 Features IT (RMS) : 5 A.
Renesas
BCR5PM-14LJ - Triac
BCR5PM-14LJ 700V - 5A - Triac Medium Power Use Features IT (RMS): 5 A VDRM: 800 V (Tj =125°C) Tj: 150°C IFGTI, IRGTI, IRGT III: 30 mA Outline .
Mitsubishi Electric Semiconductor
BCR5PM - Triac
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm.
Powerex Power Semiconductors
BCR5PM - Triac
BCR5PM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Isolated Triac 5 Amperes/400-600 Volts OUTLINE DRAWING C.
Renesas Technology
BCR5PM-14LG - Triac
BCR5PM-14LG Triac Medium Power Use Features IT (RMS) : 5 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Viso : 2000 V Outline RENES.
Renesas Technology
BCR5PM-14LD - Triac
BCR5PM-14LD Triac Medium Power Use Features IT (RMS) : 5 A VDRM : 700 V IFGTI , IRGTI, IRGT III : 50 mA Viso : 2000 V Outline RENESAS Package .
Renesas Technology
BCR5PM-14L - Triac
BCR5PM-14L Triac Medium Power Use Features • IT (RMS) : 5 A • VDRM : 700 V • IFGTI, IRGTI, IRGTⅢ : 30 mA • Viso : 2000 V Outline TO-220F 12 3 REJ03G0.