BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensi.
Inchange Semiconductor
BDX63B - Silicon NPN Darlington Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type B.
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BDX63B - NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C Hermetic TO3 Metal Package Ideally Suited for General Purpose Switchin.
Seme LAB
BDX63B - NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B.
Comset Semiconductors
BDX63B - NPN SILICON DARLINGTONS
BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power da.