BF245 Datasheet | Specifications & PDF Download

ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–So

Rating: 1 ★ (10 votes)

ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–So

Rating: 1 ★ (4 votes)

BF2450E0805RT BALUN FILTER SPECIFICATION PRODUCT FEATURES 1. Surface mount balun filter with a small size of 2.0 X 1.2 X 1.1 mm, RoHS compliant. 2. Pr

Rating: 1 ★ (4 votes)

n-channel JFETs designed for • • • • VHF/UHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Drain·Gate Voltage

Rating: 1 ★ (4 votes)

n-channel JFETs designed for • • • • VHF/UHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Drain·Gate Voltage

Rating: 1 ★ (4 votes)

Rating: 1 ★ (3 votes)

BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. 1 TO-92

Rating: 1 ★ (3 votes)

ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–So

Rating: 1 ★ (3 votes)

BF244,A,B,C CASE 29-02, STYLE 22 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Fo

Rating: 1 ★ (3 votes)

BF244,A,B,C CASE 29-02, STYLE 22 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Fo

Rating: 1 ★ (3 votes)

n-channel JFETs designed for • • • • VHF/UHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Drain·Gate Voltage

Rating: 1 ★ (3 votes)

^V£o^[£ii£ju <=5£>ni-L.onaucto'i Lr'iodiJLCtl, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors T

Rating: 1 ★ (3 votes)

^V£o^[£ii£ju <=5£>ni-L.onaucto'i Lr'iodiJLCtl, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors T

Rating: 1 ★ (3 votes)

BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. 1 TO-92

Rating: 1 ★ (2 votes)

BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. 1 TO-92

Rating: 1 ★ (2 votes)

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1

Rating: 1 ★ (2 votes)

BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. 1 TO-92

Rating: 1 ★ (2 votes)

NXP Semiconductors N-channel silicon field-effect transistors Product specification BF245A; BF245B; BF245C FEATURES  Interchangeability of drain an

Rating: 1 ★ (2 votes)

^V£o^[£ii£ju <=5£>ni-L.onaucto'i Lr'iodiJLCtl, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors T

Rating: 1 ★ (2 votes)

NXP Semiconductors N-channel silicon field-effect transistors Product specification BF245A; BF245B; BF245C FEATURES  Interchangeability of drain an

Rating: 1 ★ (1 votes)