BU603 Datasheet | Specifications & PDF Download

GBU601 – GBU607 Taiwan Semiconductor 6A, 50V - 1000V Standard Bridge Rectifier FEATURES ● AEC-Q101 qualified available ● Ideal for printed circuit b

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 550V(Min) ·High Switching Speed ·Minimum Lot-to-Lot

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KBU601 THRU KBU607 Single Phase 6.0 AMPS. Silicon Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes Features UL Recognized File

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PBU601 thru PBU606 GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 800 Volts FORWARD CURRENT - 6.0 Amperes FEATURES Rating to 800V PRV I

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KBU601G thru KBU607G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed ci

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GBU601-GBU607 Single Phase 6.0AMP.Glass Passivated Bridge Rectifiers GBU Features Ideal for printed circuit board Reliable low cost construction Pla

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SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes RBU601M THRU RBU607M FEATURES * Low leakag

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GBU601 THRU GBU607 SINGLE PHASE 6.0 AMP BRIDGE RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes FEATURES * Ideal for printed circuit b

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