isc Silicon NPN Power Transistor DESCRIPTION ·Co.
BU626A - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·Low Collector-Emitter Saturation Voltage-.BU626A - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU626A www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Short switc.