Philips Semiconductors Product Specification Pow.
BUK444-200B - PowerMOS transistor
Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.BUK444-200B - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust d.