isc Silicon NPN Power Transistor DESCRIPTION ·Co.
BUL52A - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Collector Saturation Voltage : VCE(sat) .BUL52AFI - NPN Transistor
LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL52AFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 D.