BV 8, BV 12, BV 16 Axial lead diode High voltage .
AT49BV1614T - 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou.BV16 - Axial lead diode
BV 8, BV 12, BV 16 Axial lead diode High voltage silicon rectifier diodes BV 8, BV 12, BV 16 Forward Current: 0,5 A Reverse Voltage: 8000 to 16000 V .AT49BV161T - (AT49xV160 / AT49xV161) Flash Memory
www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Archit.AT49BV1604 - 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou.AT49BV1614AT - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3.AT49BV162AT - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B.AT49BV163A - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B.AT49BV163AT - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B.AT49BV160C - 16-megabit (1M x 16) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sect.AT28BV16 - 16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV16 Features • • • • • • • • • 2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Cu.AT49BV161 - (AT49xV160 / AT49xV161) Flash Memory
www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Archit.PBV1632S - THERMAL SENSITIVE CHIP ATTENUATORS
www.DataSheet4U.com www.DataSheet4U.com .AT49BV1614 - 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou.AT49BV1604T - 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou.AT49BV1604A - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3.AT49BV1604AT - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3.AT49BV1614A - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3.AT49BV162A - 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B.AT49BV160CT - 16-megabit (1M x 16) 3-volt Only Flash Memory
Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sect.AT49BV160 - (AT49xV160 / AT49xV161) Flash Memory
www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Archit.