BV4 Datasheet | Specifications & PDF Download

Winsem Technology Corp. High Voltage NPN Transistor WTBV46 / WTBV46M POWER TRANSISTOR TO-92 Pin Definition 1. Emitter 2. Collector 3. Base TO-126 P

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RBV401 - RBV406 PRV : 100 - 600 Volts Io : 4.0 Amperes SILICON BRIDGE RECTIFIERS RBV4 0.150 (3.8) 0.134 (3.4) C3 0.996 (25.3) 0.189 (4.8) 0.97

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RBV401 - RBV406 PRV : 100 - 600 Volts Io : 4.0 Amperes SILICON BRIDGE RECTIFIERS RBV4 0.150 (3.8) 0.134 (3.4) C3 0.996 (25.3) 0.189 (4.8) 0.97

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Production specification Silicon Bridge Rectifiers FEATURES z Ideal for printed circuit board z Reliable low cost construction utilizing molded plast

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Chip Resistor Array Type: Chip Resistor Array EXB1 : 0201 Array EXB2 : 0402 Array EXB3 : 0603 Array EXBN : 0402 Array EXBV : 0603 Array EXBS : 0805

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Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak RBV

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed for general frequency control and tuning applications. They p

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Production specification Silicon Bridge Rectifiers FEATURES z Ideal for printed circuit board z Reliable low cost construction utilizing molded plast

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Freescale Semiconductor, Inc. MPC5200/D Rev. 2, 5/2004 MPC5200 Hardware Specifications Topic Page NOTE: Freescale Semiconductor, Inc 1 2 3 4

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RBV401 - RBV406 PRV : 100 - 600 Volts Io : 4.0 Amperes SILICON BRIDGE RECTIFIERS RBV4 0.150 (3.8) 0.134 (3.4) C3 0.996 (25.3) 0.189 (4.8) 0.97

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Features • Fast Read Access Time - 120 ns • Word-wide or Byte-wide Configurable • Dual Voltage Range Operation • • • – Unregulated Battery Power Suppl

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AT27BV4096 Features • • • • • • • • • • Fast Read Access Time - 120 ns Dual Voltage Range Operation Unregulated Battery Power Supply Range, 2.7V to

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–

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STBV42 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching s

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UNISONIC TECHNOLOGIES CO., LTD UBV45 HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Mult

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www.DataSheet4U.com STBV42D High voltage fast-switching NPN power transistor Preliminary data Features ■ ■ ■ ■ High voltage capability Low spread o

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CLD-AP22 REV 24 BINNING & LABELING Cree XLamp XP Family LEDs ® ® TABLE OF CONTENTS WWW.CREE.COM/XLAMP Introduction

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CLD-AP22 REV 24 BINNING & LABELING Cree XLamp XP Family LEDs ® ® TABLE OF CONTENTS WWW.CREE.COM/XLAMP Introduction

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CLD-AP22 REV 24 BINNING & LABELING Cree XLamp XP Family LEDs ® ® TABLE OF CONTENTS WWW.CREE.COM/XLAMP Introduction

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