BV 4, BV 6 High Voltage Si-Rectifiers Si-Hochspann.
Winsem Technology
WTBV46M - POWER TRANSISTOR
Winsem Technology Corp. High Voltage NPN Transistor WTBV46 / WTBV46M POWER TRANSISTOR TO-92 Pin Definition 1. Emitter 2. Collector 3. Base TO-126 P.
Motorola
SPC5200CBV400 - MPC5200 Hardware Specifications
Freescale Semiconductor, Inc. MPC5200/D Rev. 2, 5/2004 MPC5200 Hardware Specifications Topic Page NOTE: Freescale Semiconductor, Inc 1 2 3 4 .
Winsem Technology
WTBV46 - POWER TRANSISTOR
Winsem Technology Corp. High Voltage NPN Transistor WTBV46 / WTBV46M POWER TRANSISTOR TO-92 Pin Definition 1. Emitter 2. Collector 3. Base TO-126 P.
Winsem Technology
WTBV49SL - POWER TRANSISTOR
Winsem Technology Corp. High Voltage NPN Transistor WTBV49SL / WTI49S POWER TRANSISTOR TO-92 Pin Definition 1. Emitter 2. Collector 3. Base Features.
EIC
RBV404 - SILICON BRIDGE RECTIFIERS
RBV401 - RBV406 PRV : 100 - 600 Volts Io : 4.0 Amperes SILICON BRIDGE RECTIFIERS RBV4 0.150 (3.8) 0.134 (3.4) C3 0.996 (25.3) 0.189 (4.8) 0.97.
BLUE ROCKET ELECTRONICS
STBV45 - Silicon NPN transistor
STBV45 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ，，。 High voltage c.
BLUE ROCKET ELECTRONICS
STBV42 - Silicon NPN transistor
STBV42 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ，，。 High voltage c.
ATMEL
AT49BV4096 - 4-Megabit (256K x 16) 3-volt Only CMOS Flash Memory
Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture.
ATMEL Corporation
AT27BV400 - 4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM
Features • Fast Read Access Time - 120 ns • Word-wide or Byte-wide Configurable • Dual Voltage Range Operation • • • – Unregulated Battery Power Suppl.
ATMEL Corporation
AT27BV4096 - 4 Megabit 256K x 16 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
AT27BV4096 Features • • • • • • • • • • Fast Read Access Time - 120 ns Dual Voltage Range Operation Unregulated Battery Power Supply Range, 2.7V to .BV4503 - IASI2-Digital Switch
ByVac Product Specification IASI2-Digital Switch BV4503 BV4503 IASI2-Digital Switch Product specification December 2008 V0.a ©ByVac Page 1 of 13.
GME
RBV410 - Silicon Bridge Rectifiers
Production specification Silicon Bridge Rectifiers FEATURES z Ideal for printed circuit board z Reliable low cost construction utilizing molded plast.
GME
RBV4005 - Silicon Bridge Rectifiers
Production specification Silicon Bridge Rectifiers FEATURES z Ideal for printed circuit board z Reliable low cost construction utilizing molded plast.
ON Semiconductor
MMBV409LT1 - Silicon Tuning Diode
www.DataSheet4U.com MMBV409LT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency cont.
ETL
MMBV409LT1 - Silicon Tuning Diode
www.DataSheet4U.com Silicon Tuning Diode This device is designed in the surface Mount package for general frequency control and tuning applications.I.
UTC
UBV45 - NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD UBV45 HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Mult.
ST Microelectronics
STBV42D - High voltage fast-switching NPN power transistor
www.DataSheet4U.com STBV42D High voltage fast-switching NPN power transistor Preliminary data Features ■ ■ ■ ■ High voltage capability Low spread o.
Panasonic
EXBV4V - Chip Resistor Array
Chip Resistor Array Type: Chip Resistor Array EXB1 : 0201 Array EXB2 : 0402 Array EXB3 : 0603 Array EXBN : 0402 Array EXBV : 0603 Array EXBS : 0805 .
