.
Yageo
SBY160808T-xxxY-N - Multilayer Ferrite Chip Beads
YAGEO CORPORATION SMD INDUCTOR / BEADS www.DataSheet4U.com Multilayer Ferrite Chip Beads SB/PB/UP/NB/GB Series Series for General Purpose / PB Seri.
Diotec Semiconductor
BY16 - Silicon Rectifiers
BY 4 BY 16 High Voltage Si-Rectifiers Si-Hochspannungs-Gleichrichter 6.3 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische.
Sunmate
BY1600 - STANDARD RECOVERY RECTIFIER DIODES
BY251 - BY2000 STANDARD RECOVERY RECTIFIER DIODES Features Periodische Spitzensperrspannung Kunststoffgehäuse Weight approx. – Gewicht ca. Pl.
Diotec Semiconductor
BY1600 - Silicon Rectifiers
BY 251 … BY 255, BY 1600 … BY 2000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Ø 4.5 ±0.1 3A 200…2000 V ~ DO-201 1g Repet.
Diotec Semiconductor
BY164 - Silicon-Bridge Rectifiers
Diotec Silicon-Bridge Rectifiers BY 164, BY 179 Silizium-Brückengleichrichter Nominal current – Nennstrom Alternating input voltage Eingangswechsels.
Mitsubishi
M5M29FB800RV-10 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD .
Mitsubishi
M5M29FB800RV-12 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD .
Mitsubishi
M5M29FB800RV-80 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD .
Mitsubishi
M5M29FT800RV-10 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD .
Mitsubishi
M5M29FT800RV-12 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD .
Mitsubishi
M5M29GB - 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs M5M29GB/T161BWG 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FL.
Mitsubishi
M5M29GB160BVP-80 - 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPT.
Mitsubishi
M5M29GT161BWG - 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs M5M29GB/T161BWG 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FL.
Philips
BY164 - SILICON BRIDGE RECTIFIER
________________Jl___BY_164__ SILICON BRIDGE RECTIFIER Plastic-encapsulated bridge rectifier comprising four silicon double-diffused diodes. It is p.
Semikron International
BY1600 - Standard silicon rectifier diodes
BY 1600 BY 2000 *0 8 9 1 9 9 ) -) 1 9 9 ) 9 9 0 ,3 4 $ 6 ,8 4 $ 6 ,88 4 $ 6 $ $ $ .
Yageo
SBY160808T-xxxY-S - Multilayer Ferrite Chip Beads
YAGEO CORPORATION SMD INDUCTOR / BEADS www.DataSheet4U.com Multilayer Ferrite Chip Beads SB/PB/UP/NB/GB Series Series for General Purpose / PB Seri.
Chilisin Electronics
PBY160808T - SMD Multilayer Ferrite Chip Beads
SMD Multilayer Ferrite Chip Beads Multilayer Ferrite Chip Beads Product Identification Chilisin offers a wide range of multi-layered ferrite chip be.
Mitsubishi
M5M29FT800RV-80 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD .
Mitsubishi
M5M29GB160BVP - 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPT.
Mitsubishi
M5M29GB161BWG - 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs M5M29GB/T161BWG 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FL.