BY550-600 Datasheet | Specifications & PDF Download

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www.DataSheet4U.com WTE POWER SEMICONDUCTORS BY550-50 – BY550-1000 Pb 5.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage

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BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliabili

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BY550-50 - BY550-1000 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 5.0A Features Diffused Junction Low Forward Voltag

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R SEMICONDUCTOR BY550-50 THRU BY550-1000 GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -5.0Amperes JF SILICON

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Features BY550-50 THRU BY550-1000 5.0 Amps. Silicon Rectifiers * Low Forward Voltage Drop * High Current Capability * High Reliability * High Surge

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BY 550-50 … BY 550-1000 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensper

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BY550-50 BY550-1000 5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-201AD (Plastic) Voltage 50 to 1000 V. 9.1 ± 0.3 Current 5.0 A.

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