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Ordering number : EN4163A Asynchronous Silicon Gate CMOS LSI LC36256AL, AML-70/85/10/12 256 K (32768 words × 8 bits) SRAM Overview The LC36256AL, A

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Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are

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GT34C04 Advanced GT34C04 4K Bits SPD EEPROM Copyright © 2014 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the righ

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Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K (32768 words × 8 bits) Pseudo-SRAM Overview The LC33832 series is comp

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BL24C02F 2Kbits (256×8) Features  Compatible with all I²C bidirectional data transfer protocol  Memory array: – 2 Kbits (256bytes) of EEPROM – Pag

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 Rev. 0.7 Preliminary LY68L6400 64M Bits Serial Pseudo-SRAM with SPI and QPI 1 TABLE OF CONTENTS 1 TABLE OF CONTENTS ……………………………………………………………. 0

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DESCRIPTION 32Mx64 bits Unbuffered DDR SDRAM DIMM HYMD132645B(L)8-M/K/H/L Hynix HYMD132645B(L)8-M/K/H/L series is unbuffered 184-pin double data rat

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Ordering number : EN4163A Asynchronous Silicon Gate CMOS LSI LC36256AL, AML-70/85/10/12 256 K (32768 words × 8 bits) SRAM Overview The LC36256AL, A

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GT25C16 GT25C16 SPI 16K Bits Serial EEPROM Copyright © 2011 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right

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IS42VM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42VM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized a

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Princeton Technology Corp. 16 Bits Shift Register Latched Constant Current Driver IC Tel: 886-2-29162151 Fax: 886-2-29174598 URL: http://www.princeto

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Ordering number : EN4163A Asynchronous Silicon Gate CMOS LSI LC36256AL, AML-70/85/10/12 256 K (32768 words × 8 bits) SRAM Overview The LC36256AL, A

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www.DataSheet4U.com comtech aha corporation PRODUCT BRIEF* AHA4541 311 MBITS/SEC TURBO PRODUCT CODE ENCODER/DECODER The AHA4541 device is a single-c

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ADC1003S030/040/050 Rev. 02 — 7 August 2008 www.DataSheet4U.com Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Product d

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4G B Die DDRIII SDRAM Specification P3P4GF4BLF Deutron Electronics Corp. 8F, 68, Sec. 3, NanKing E. RD., Taipei 104, Taiwan, R.O.C. TEL: (886)-2-251

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COVER PRELIMINARY DATA SHEET 4G bits DDR3L SDRAM EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b

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DESCRIPTION 32Mx64 bits Unbuffered DDR SDRAM DIMM HYMD132645B(L)8-M/K/H/L Hynix HYMD132645B(L)8-M/K/H/L series is unbuffered 184-pin double data rat

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IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronou

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IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronou

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