Broadband Datasheet | Pinout, Features, Price Comparison & PDF

F4558 F4558 、 F4558 F1458 ，。 · · · （） DIP、CSOP TO-8 、 （1/2） 132#（741000） 0938-8285884（T）8224113（F） 1 32（741000） 0938-8285884（T）8

Broadband Two-Way Power Divider 2 MHz - 2 GHz Features q q q H-8-4 V2.00 C-19 11 Octave Coverage Low Loss – 1.25 dB Max High Isolation – 20 dB Min

Broadband Two-Way Power Divider 2 MHz - 2 GHz Features q q q H-8-4 V2.00 C-19 11 Octave Coverage Low Loss – 1.25 dB Max High Isolation – 20 dB Min

www.DataSheet4U.com 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1004 Chip Device Layout Features Balanced Design Excellen

Broadband Two-Way Power Divider 2 MHz - 2 GHz Features q q q H-8-4 V2.00 C-19 11 Octave Coverage Low Loss – 1.25 dB Max High Isolation – 20 dB Min

www.DataSheet4U.com 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1001 Chip Device Layout Features Balanced Design Excell

Broadband Two-Way Power Divider 2 MHz - 2 GHz Features q q q H-8-4 V2.00 C-19 11 Octave Coverage Low Loss – 1.25 dB Max High Isolation – 20 dB Min

www.DataSheet4U.com 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1002 Chip Device Layout Features Balanced Design Excell

8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Satur

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF151G/D The RF MOSFET Line RF Power Field-Effe

26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Chip Device Layout Features High Linearity Wideband Amplifier On-Chip Tempera

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin August 2006 - Rev 16-Aug-06 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Larg

NJG1188KG1 Broadband Low Noise Amplifier GaAs MMIC ■ FEATURES ● Wide frequency range 950 to 3224 MHz ● Supply Voltage 3.0 to 5.5V ● Operating cur

www.DataSheet4U.com 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1005 Chip Device Layout Features Wideband Low Noise Amplif

17.0-24.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1000 Chip Device Layout Features High Linearity Output Amplifier Balanced Design P

BROADBAND CW TWT LAB AMPLIFIER FOR RADAR, EMC AND EW TESTING 2.5 – 7.5 GHz 550W typ. 2.0 – 8.0 GHz 400W typ. 6.0 – 18.0 GHz 325W typ. 7.5 – 18.0 GHz 3

Broadband Two-Way Power Divider 2 MHz - 2 GHz Features q q q H-8-4 V2.00 C-19 11 Octave Coverage Low Loss – 1.25 dB Max High Isolation – 20 dB Min

17.0-24.0 GHz GaAs MMIC Power Amplifier July 2006 - Rev 30-Jul-06 P1019-BD Chip Device Layout Features Excellent Transmit Output Stage Temperature C

30.0-46.0 GHz GaAs MMIC Receiver May 2005 - Rev 13-May-05 Features Mimix Broadband’s 30.0-46.0 GHz GaAs MMIC receiver has a noise figure of 3.5 dB a

32.0-45.0 GHz GaAs MMIC Transmitter August 2006 - Rev 02-Aug-06 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplif