C106 Series Preferred Devices Sensitive Gate Sili.
C106B - Thyristors
C106 Series Pin Out 3 21 Thyristors Surface Mount > 200 - 600V > C106 Series Pb Description Glassivated PNPN devices designed for high volume consum.C106BG - Thyristors
C106 Series Pin Out 3 21 Thyristors Surface Mount > 200 - 600V > C106 Series Pb Description Glassivated PNPN devices designed for high volume consum.HC106BS - 2A SCRs
2A SCRs : 2A 【】 RoHS SGS, RoHS ■ Product Model Reference & Naming【】 2A (Amperes) TO-126 or TO-225AA TO-126 TO-126F TO-126 TO-252 or SOT428 TO-2.C106B1 - SILICON CONTROLLED RECTIFIER
C106A1 C106D1 C106B1 C106E1 C106C1 C106M1 SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: Th.C106B2 - SILICON CONTROLLED RECTIFIER
C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENT.C106B - Sensitive Gate Silicon Controlled Rectifiers
C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high vol.C106B - SILICON CONTROLLED RECTIFIER
C106 SERIES High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high.TIC106B - P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • .HC106B - 2A SCRs
2A SCRs : 2A 【】 RoHS SGS, RoHS ■ Product Model Reference & Naming【】 2A (Amperes) TO-126 or TO-225AA TO-126 TO-126F TO-126 TO-252 or SOT428 TO-2.HC106BF - 2A SCRs
2A SCRs : 2A 【】 RoHS SGS, RoHS ■ Product Model Reference & Naming【】 2A (Amperes) TO-126 or TO-225AA TO-126 TO-126F TO-126 TO-252 or SOT428 TO-2.C106B - Thyristor
C106 Rev.D Oct.-2015 DATA SHEET / Descriptions TO-92 。Thyristor in a TO-92 Plastic Package. / Features ,,,。 The consumption level provide reli.CY7C106B - 256K x 4 Static RAM
1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 495 mW • L.C106B - SCRs 4 AMPERES RMS 50 thru 600 VOLTS
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by C106/D Silicon Controlled Rectifier Reverse Blocking Triode Thyris.C106B - 4-A Sensitive-Gate Silicon Controlled Rectifiers
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