C2258 Datasheet | Specifications & PDF Download

Features n 71.1dB SNR n 88dB SFDR n Low Power: 79mW/47mW/34mW n Single 1.8V Supply n CMOS, DDR CMOS or DDR LVDS Outputs n Selectable Input Ranges: 1VP

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Features n 74dB SNR n 88dB SFDR n Low Power: 81mW/49mW/35mW n Single 1.8V Supply n CMOS, DDR CMOS or DDR LVDS Outputs n Selectable Input Ranges: 1VP-P

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KSC2258/2258A KSC2258/2258A High Voltage General Amplifier TV Video Output Amplifier • High BVCEO 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epit

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BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) T

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Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■

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KSC2258/2258A KSC2258/2258A High Voltage General Amplifier TV Video Output Amplifier • High BVCEO 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epit

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2SC2258(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features ,fT 。 High

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2SC2258(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features ,fT 。 High

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Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION ·With TO-126 package ·High tran

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Current-Gain Bandwidth Product ·M

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION ·With TO-126 package ·High tra

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