C2M0160120D Datasheet | Specifications & PDF Download

C2M0160120D Silicon Carbide Power MOSFET

VDS 1200 V C2M0160120D Silicon Carbide Power .

C2M0160120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance •

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VDS 1200 V C2M0160120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 18 A 160 mΩ N-Channel Enhancement Mode

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