VDS 1200 V C2M0160120D Silicon Carbide Power .
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C2M0160120D - Silicon Carbide Power MOSFET
VDS 1200 V C2M0160120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 18 A 160 mΩ N-Channel Enhancement Mode .
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C2M0160120D - Silicon Carbide Power MOSFET
C2M0160120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • .