C2M0280120D Datasheet | Specifications & PDF Download

C2M0280120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • C2MTM Silicon Carbide (SiC) MOSFET technology

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VDS 1200 V C2M0280120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 11 A 280 mΩ N-Channel Enhancement Mode F

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