VDS 1200 V C2M0280120D Silicon Carbide Power MOS.
Cree
2
C2M0280120D - Silicon Carbide Power MOSFET
VDS 1200 V C2M0280120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 11 A 280 mΩ N-Channel Enhancement Mode F.
Wolfspeed
2
C2M0280120D - Silicon Carbide Power MOSFET
C2M0280120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • C2MTM Silicon Carbide (SiC) MOSFET technology .