C2M1000170D Datasheet | Specifications & PDF Download

C2M1000170D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Speed Switching with Low Capacitances • Hi

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VDS 1700 V C2M1000170D ID @ 25˚C 5.0 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 1.0 Ω N-Channel Enhancement Mode

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