
C2M1000170D (Cree)
Silicon Carbide Power MOSFET
VDS
1700 V
C2M1000170D
ID @ 25˚C
5.0 A
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
RDS(on)
1.0 Ω
N-Channel Enhancement Mode
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VDS 1700 V C2M1000170D ID @ 25˚C 5.0 A Silic.
Silicon Carbide Power MOSFET
Silicon Carbide Power MOSFET
C2M1000170D Distributor