C2M1000170D Datasheet | Specifications & PDF Download

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C2M1000170D Silicon Carbide Power MOSFET

VDS 1700 V C2M1000170D ID @ 25˚C 5.0 A Silic.

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C2M1000170D - Silicon Carbide Power MOSFET

 VDS 1700 V C2M1000170D ID @ 25˚C 5.0 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 1.0 Ω N-Channel Enhancement Mode .
Rating: 1 ★ (1 votes)
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C2M1000170D - Silicon Carbide Power MOSFET

 C2M1000170D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Speed Switching with Low Capacitances • Hi.
Rating: 1 ★ (1 votes)
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