C3094 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minim

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GSMDC3094X 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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30V N-Channel MOSFETs PDC3094X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Free Datasheet http://www.Datasheet4U.com

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