C3708 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TECHNICAL DATA High frequency amplifier transistor, RF switching application. FEATURES Very low on resistance (RON). Low capacitance. M

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FEATURES n Very Low Duty Factor Operation (tON(MIN) < 85ns) n No RSENSE Option for Maximum Efficiency n Very Fast Transient Response n Programmable O

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Ordering number:ENN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features · Adoption of FBET p

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Ordering number:ENN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features · Adoption of FBET p

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INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Ratin

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INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Ratin

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INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Ratin

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UC1708 UC2708 UC3708 Dual Non-Inverting Power Driver FEATURES • • • • • • • • • • • 3.0A Peak Current Totem Pole Output 5 to 35V Operation 25ns Rise

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www.ti.com UC1708 UC2708 UC3708 SLUS171C – MARCH 1997 – REVISED SEPTEMBER 2007 DUAL NON-INVERTING POWER DRIVER FEATURES 1 • 3.0A Peak Current Totem

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