Power Transistors 2SC3743 Silicon NPN triple diffu.
2SC3743 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION · ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·Wide Area of Safe Operation ·High S.C3743 - 2SC3743
Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.2±0.2 16.7±0.3 7.5±0.2SC3743 - Silicon NPN Transistor
Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.2±0.2 16.7±0.3 7.5±0.