C3743 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION · ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·Wide Area of Safe Operation ·High S

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Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.2±0.2 16.7±0.3 7.5±0

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Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.2±0.2 16.7±0.3 7.5±0

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