C3M0021120K Silicon Carbide Power MOSFET C3MTM MOS.
C3M0021120K - Silicon Carbide Power MOSFET
VDS 1200 V C3M0021120K ID @ 25˚C 100 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 21 mΩ N-Channel Enhancement Mode.C3M0021120K - Silicon Carbide Power MOSFET
C3M0021120K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optim.C3M0021120K1 - Silicon Carbide Power MOSFET
C3M0021120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO.