C3M0030090K Datasheet | Specifications & PDF Download

C3M0030090K Silicon Carbide Power MOSFET

VDS 900 V C3M0030090K ID @ 25˚C 73 A Silicon.

C3M0030090K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • C3MTM SiC MOSFET technolo

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VDS 900 V C3M0030090K ID @ 25˚C 73 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 30 mΩ N-Channel Enhancement Mode

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